idiode
Kwizixhobo ze-elektroniki, isixhobo esine-electrode ezimbini ezivumela kuphela ukuba ikhoyo ihambe kwicala elinye isoloko isetyenziselwa ukulungiswa kwayo. Kwaye i-varactor diodes isetyenziswa njenge-electronic adjustable capacitors. Ulwalathiso lwangoku olunoninzi lweediode luqhele ukubizwa ngokuba ngumsebenzi "wokulungisa". Umsebenzi oqhelekileyo we-diode kukuvumela ukuba i-current idlule kuphela kwicala elinye (eyaziwa ngokuba yi-forward bias), kunye nokuyivimba ngasemva (eyaziwa ngokuba yi-reverse bias). Ke ngoko, iidiode zinokucingelwa njengeenguqulelo ze-elektroniki zeevalvu zokutshekisha.
Iidiode ze-elektroniki zokufunxa kwangoko; Sisixhobo sombane esinokuqhuba ngoku unidirectionally. Kukho i-PN junction eneetheminali ezimbini ezikhokelayo ngaphakathi kwe-semiconductor diode, kwaye esi sixhobo sombane sine-unidirectional current conductivity ngokwesikhokelo sombane osetyenzisiweyo. Ngokuqhelekileyo, i-crystal diode yi-pn junction interface eyenziwe yi-sintering p-type kunye ne-n-type semiconductors. Izaleko zentlawulo yesithuba zenziwe kumacala omabini ojongano lwayo, zenza indawo yombane ezakhelweyo. Xa i-voltage esetyenzisiweyo ilingana no-zero, i-diffusion yangoku ebangelwa ngumahluko woxinaniso lwabathwali bentlawulo kumacala omabini e-pn junction kunye ne-drift yangoku ebangelwa yintsimi yombane eyakhiweyo iyalingana kwaye ikwimeko yokulingana kombane, ekwanjalo. uphawu lweediode phantsi kweemeko eziqhelekileyo.
Iidiode zakuqala zazibandakanya "iikristale zewhisker yekati" kunye neetyhubhu zokufunxa (ezaziwa ngokuba "ziivalvu ze-ionization ze-thermal" e-UK). Ezona diode zixhaphakileyo kule mihla zisebenzisa izixhobo zesemiconductor ezifana nesilicon okanye igermanium.

uphawu
Ukunyaniseka
Xa i-voltage yangaphambili isetyenzisiwe, ekuqaleni kweempawu zangaphambili, i-voltage yangaphambili incinci kakhulu kwaye ayanele ukoyisa umphumo wokuthintela kwintsimi yombane ngaphakathi kwe-PN junction. Umsinga wangaphambili uphantse ube ngu-zero, kwaye eli candelo libizwa ngokuba yindawo efileyo. I-voltage eya phambili engakwazi ukwenza i-diode conduct ibizwa ngokuba yi-voltage yendawo efileyo. Xa i-voltage yangaphambili inkulu kune-voltage yendawo efileyo, intsimi yombane ngaphakathi kwe-PN junction iyoyiswa, i-diode iqhubela phambili phambili, kwaye okwangoku inyuka ngokukhawuleza ngokunyuka kwamandla ombane. Kuluhlu oluqhelekileyo lokusetyenziswa kwangoku, i-voltage ye-terminal ye-diode ihlala iphantse rhoqo ngexesha lokuqhuba, kwaye lo mbane ubizwa ngokuba yi-voltage yangaphambili ye-diode. Xa i-voltage ehamba phambili kwi-diode idlula ixabiso elithile, intsimi yombane yangaphakathi iyancipha ngokukhawuleza, uphawu lwangoku lwanda ngokukhawuleza, kwaye i-diode iqhubela phambili. Ibizwa ngokuba yi-threshold voltage okanye i-threshold voltage, malunga ne-0.5V yeetyhubhu ze-silicon kunye ne-0.1V ye-germanium tubes. I-voltage conduction yangaphambili yehla ye-silicon diode malunga ne-0.6-0.8V, kwaye i-voltage conduction yangaphambili yehla ye-germanium diode malunga ne-0.2-0.3V.
Reverse polarity
Xa i-voltage ye-reverse esetyenzisiweyo ingagqithisi uluhlu oluthile, i-current edlulayo kwi-diode yi-current current eyenziwa yi-drift motion yabathwali abancinci. Ngenxa yombane omncinci ojikelezayo, i-diode ikwimeko yokunqunyulwa. Lo msinga ubuyela umva ukwabizwa ngokuba yireverse saturation yangoku okanye ukuvuza kwangoku, kwaye umva wangoku wokugcwala kwediode uchatshazelwa kakhulu bubushushu. Umva wangoku we-silicon transistor incinci kakhulu kune-germanium transistor. I-reverse saturation yangoku ye-transistor yamandla aphantsi ye-silicon ikwi-oda ye-nA, ngelixa i-germanium transistor yamandla aphantsi ikwindlela ye-μ A. Xa ubushushu buphakama, i-semiconductor ivuyiswa bubushushu, inani abathwali abancinci bayanda, kwaye i-reverse saturation current nayo iyanda ngokufanelekileyo.

yoyisakala
Xa i-voltage ye-reverse esetyenzisiweyo idlula ixabiso elithile, i-current current iya kwanda ngokukhawuleza, ebizwa ngokuba yi-electric breakdown. Umbane obalulekileyo obangela ukophuka kombane ubizwa ngokuba yi-diode reverse breakdown voltage. Xa ukuphuka kombane kwenzeka, i-diode ilahlekelwa yi-conductivity yayo ye-unidirectional. Ukuba i-diode ayigqithisi ngenxa yokutshatyalaliswa kombane, i-conductivity yayo ye-unidirectional ayinakutshatyalaliswa ngokusisigxina. Ukusebenza kwayo kusenokubuyiselwa emva kokususa i-voltage esetyenzisiweyo, ngaphandle koko i-diode iya konakala. Ke ngoko, i-voltage eguqukayo egqithileyo esetyenziswa kwidiode kufuneka igwenywe ngexesha lokusetyenziswa.
I-diode sisixhobo se-terminal ezibini kunye ne-unidirectional conductivity, enokuthi ihlulwe kwiidiode ze-elektroniki kunye ne-crystal diodes. Iidiode ze-elektroniki zinokusebenza okuphantsi kune-crystal diode ngenxa yokulahleka kobushushu be-filament, ngoko ke azifane zibonwe. I-Crystal diode ixhaphake kwaye isetyenziswa ngokuqhelekileyo. I-unidirectional conductivity ye-diode isetyenziswe phantse kuzo zonke iisekethe ze-elektroniki, kwaye i-semiconductor diodes idlala indima ebalulekileyo kwiisekethe ezininzi. Zezinye zezona zixhobo zokuqala ze-semiconductor kwaye zinoluhlu olubanzi lwezicelo.
Ukuhla kwamandla ombane angaphambili kwi-silicon diode (uhlobo olungakhanyisiyo) yi-0.7V, ngelixa ukwehla kwamandla ombane angaphambili kwi-germanium diode yi-0.3V. Ukuhla kwamandla ombane angaphambili kwi-diode ekhupha ukukhanya kuyahluka ngemibala eyahlukeneyo ekhanyayo. Ubukhulu becala kukho imibala emithathu, kwaye amaxabiso esalathiso sokuhla kwamandla ombane angoluhlobo lulandelayo: ukuhla kwamandla ombane kwiidiode ezikhupha ukukhanya okubomvu yi-2.0-2.2V, ukuhla kombane kwi-yellow light-emitting diode yi-1.8-2.0V, kunye nombane ithontsi ye-green light-emitting diode yi-3.0-3.2V. Ireyithingi yangoku ngexesha lokukhutshwa kokukhanya okuqhelekileyo malunga ne-20mA.
I-voltage kunye ne-current ye-diode ayihambelani ngokulandelelana, ngoko ke xa udibanisa ii-diode ezahlukeneyo ngokuhambelanayo, i-resistors efanelekileyo kufuneka idibaniswe.

ijika lophawu
Njengee-PN junctions, i-diode ine-conductivity engabonakaliyo. Ijiko eliqhelekileyo le-volt ampere ye-silicon diode. Xa i-voltage yangaphambili isetyenziswe kwi-diode, i-current incinci kakhulu xa ixabiso le-voltage liphantsi; Xa i-voltage idlula i-0.6V, i-current iqala ukunyuka ngokukhawuleza, okubizwa ngokuba yi-voltage yokuvula i-diode; Xa i-voltage ifikelela malunga ne-0.7V, i-diode ikwimeko eqhuba ngokupheleleyo, ngokuqhelekileyo ibizwa ngokuba yi-voltage conduction ye-diode, emele isimboli se-UD.
Kwi-germanium diode, i-voltage yokuvula i-0.2V kunye ne-voltage conduction UD imalunga ne-0.3V. Xa i-voltage ye-reverse isetyenziswe kwi-diode, yangoku incinci kakhulu xa ixabiso le-voltage liphantsi, kwaye ixabiso layo langoku liyi-reverse saturation yangoku IS. Xa i-voltage ejikelezayo idlula ixabiso elithile, i-current iqala ukunyuka ngokukhawuleza, okubizwa ngokuba yi-reverse breakdown. Lo mbane ubizwa ngokuba yi-reverse breakdown voltage ye-diode kwaye imelwe luphawu UBR. Amaxabiso ombane wokuqhekeka kwe-UBR yeentlobo ezahlukeneyo zeediode ahluka kakhulu, ukusuka kumashumi eevolthi ukuya kumawaka aliqela evolthi.

Umva ukuqhekeka
Ukuqhekeka kweZener
Uqhekeko olubuyela umva lunokwahlulwa lube ziindidi ezimbini ngokusekwe kwindlela: Ukuqhekeka kweZener kunye nokuqhekeka kweAvalanche. Kwimeko yoxinaniso lwe-doping ephezulu, ngenxa yobubanzi obuncinci bommandla wesithintelo kunye nombane omkhulu obuyela umva, ulwakhiwo lwe-covalent bond kwindawo yomqobo luyatshatyalaliswa, lubangela ukuba ii-electron ze-valence zikhululeke kwiibhondi ze-covalent kwaye zivelise izibini ze-electron hole, okubangela ukwanda ngokukhawuleza kwangoku. Oku kuchithwa kubizwa ngokuba yi-Zener breakdown. Ukuba i-doping concentration iphantsi kwaye ububanzi bommandla wesithintelo bubanzi, akukho lula ukubangela ukuphuka kweZener.

Ukuqhekeka kweAvalanche
Olunye uhlobo lokuqhekeka kukuqhekeka kwe-avalanche. Xa i-voltage ebuyela umva inyuka iye kwixabiso elikhulu, indawo yombane esetyenzisiweyo ikhawulezisa isantya se-electron drift, ibangele ukungqubana nee-electron ze-valence kwi-covalent bond, ibakhupha kwibhondi edibeneyo kwaye ivelise izibini ze-electron hole entsha. Imingxunya yee-elektroni ezisanda kuveliswa zikhawuleziswa yintsimi yombane kwaye zingqubane nezinye ii-electron ze-valence, ezibangela i-avalanche efana nokunyuka kwabathwali beentlawulo kunye nokunyuka okubukhali kwamandla akhoyo. Olu hlobo loqhekeko lubizwa ngokuba yi-avalanche breakdown. Kungakhathaliseki ukuba luhlobo luni lokuphazamiseka, ukuba i-current ayikhawulelwanga, inokubangela umonakalo osisigxina kwi-PN junction.