Yintoni itshiphu ye-LED? Ngoko ke zithini iimpawu zayo? Ukwenziwa kweetshiphusi ze-LED kujoliswe ikakhulu ekuveliseni ii-electrode zoqhagamshelwano ezisebenzayo nezithembekileyo ze-ohmic, ezinokuhlangabezana nokuhla kwamandla ombane amancinci phakathi kwezixhobo zoqhagamshelwano kunye nokubonelela ngeepads ze-solder, ngelixa ukhupha ukukhanya okukhulu kangangoko kunokwenzeka. Inkqubo yokudlulisa ifilimu ngokuqhelekileyo isebenzisa indlela yokukhupha ivacuum. Ngaphantsi kwe-4Pa i-vacuum ephezulu, izinto ziyanyibilika ngokufudumeza ukuxhathisa okanye i-electron beam bombardment yokufudumeza indlela yokufudumeza, kwaye i-BZX79C18 iguqulwa ibe ngumphunga wesinyithi kwaye ifakwe kumphezulu wezinto ze-semiconductor phantsi koxinzelelo oluphantsi.
Iintsimbi ezisetyenziswa ngokuqhelekileyo zohlobo lwe-P ziquka i-alloys ezifana ne-AuBe kunye ne-AuZn, ngelixa i-N-side contact metal isoloko yenziwe nge-AuGeNi alloy. Umaleko we-alloy owenziwe emva kokugquma kwakhona kufuneka uveze indawo ekhupha ukukhanya kangangoko kunokwenzeka ngeteknoloji ye-photolithography, ukwenzela ukuba umaleko we-alloy oseleyo unokuhlangabezana neemfuno ze-electrode ephantsi yoqhagamshelwano ye-ohmic kunye ne-solder wire pads. Emva kokuba inkqubo ye-photolithography igqityiwe, inkqubo ye-alloying iphinda iqhutywe, ngokuqhelekileyo phantsi kokukhuselwa kwe-H2 okanye i-N2. Ixesha kunye nokushisa kwe-alloying ngokuqhelekileyo kunqunywe yimiba efana neempawu zezixhobo ze-semiconductor kunye nefom yesithando somlilo we-alloy. Ewe kunjalo, ukuba inkqubo ye-electrode yeetships eziluhlaza-luhlaza inzima ngakumbi, ukukhula kwefilimu ye-passivation kunye neenkqubo ze-plasma etching kufuneka zongezwe.

Kwinkqubo yokwenziwa kwee-chips ze-LED, zeziphi iinkqubo ezinempembelelo enkulu ekusebenzeni kwazo kwe-optoelectronic?
Ngokuqhelekileyo, emva kokugqitywa kwemveliso ye-LED epitaxial, iipropati zayo eziphambili zombane ziye zagqitywa, kwaye ukuveliswa kwe-chip akutshintshi ubume bayo obuphambili. Nangona kunjalo, iimeko ezingafanelekanga ngexesha lokwaleka kunye neenkqubo ze-alloying zingabangela ezinye iiparitha zombane ezimbi. Umzekelo, ubushushu obuphantsi okanye obuphezulu be-alloying bunokubangela ukunxibelelana kwe-ohmic embi, esona sizathu siphambili sokuhla kwamandla ombane aphezulu we-VF kwimveliso ye-chip. Emva kokusika, ukwenza ezinye iinkqubo ze-corrosion kwimida ye-chip kunokuba luncedo ekuphuculeni ukuvuza okubuyela emva kwe-chip. Oku kungenxa yokuba emva kokusika ngentsimbi yevili lokusila idayimani, kuya kubakho ubuninzi be-debris powder eseleyo kumda we-chip. Ukuba la maqhekeza anamathele kwi-PN junction ye-chip ye-LED, ziya kubangela ukuvuza kombane kunye nokuphuka. Ukongeza, ukuba i-photoresist kumphezulu we-chip ayixobulwanga ngokucocekileyo, iya kubangela ubunzima kunye ne-soldering ebonakalayo yemigca ye-solder yangaphambili. Ukuba isemva, iya kubangela ukuhla koxinzelelo oluphezulu. Ngexesha lenkqubo yokuvelisa itshiphu, iindlela ezinje ngokurhabaxa komhlaba kunye nokusikwa kwizakhiwo eziguquliweyo zetrapezoidal zinokunyusa ukukhanya.

Kutheni iitshiphusi ze-LED zahlulwe ngokweesayizi ezahlukeneyo? Ziziphi iimpembelelo zobungakanani ekusebenzeni kwe-photoelectric ye-LED?
Ubungakanani beetshiphusi ze-LED zinokwahlulwa zibe ziitshiphusi ezinamandla aphantsi, iitshiphusi zamandla aphakathi, kunye neetshiphusi ezinamandla aphezulu ngokwamandla azo. Ngokweemfuno zabathengi, inokwahlulwa ngokweendidi ezinje ngenqanaba letyhubhu enye, inqanaba ledijithali, inqanaba lematrix yamachaphaza, kunye nezibane zokuhombisa. Ngokubhekiselele kubungakanani obuthile be-chip, kuxhomekeke kwinqanaba lokwenyani lokuvelisa abavelisi be-chip abahlukeneyo kwaye akukho zidingo ezithile. Ngethuba nje inkqubo iphezulu, iitshiphusi ezincinci zinokunyusa imveliso yeyunithi kunye nokunciphisa iindleko, kwaye ukusebenza kwe-optoelectronic akuzukwenza utshintsho olusisiseko. Umjelo osetyenziswa yitshiphu ngokwenene unxulumene noxinaniso lwangoku oluhamba ngalo. Itshiphu encinci isebenzisa umsinga omncinci, ngelixa i-chip enkulu isebenzisa yangoku ngakumbi. Uxinaniso lwangoku lweyunithi ngokusisiseko luyafana. Ukuqwalasela ukuba ukutshatyalaliswa kobushushu kungumba oyintloko phantsi kombane ophezulu, ukusebenza kwayo okukhanyayo kuphantsi kunoko kuphantsi kwangoku. Ngakolunye uhlangothi, njengoko ummandla ukhula, ukuchasana komzimba we-chip kuya kuncipha, kubangele ukuhla kwe-voltage conduction yangaphambili.

Yeyiphi indawo eqhelekileyo yeechips ze-LED eziphezulu zamandla? Ngoba?
Iichips ze-LED eziphezulu zamandla ezisetyenziselwa ukukhanya okumhlophe zifumaneka ngokubanzi kwimarike malunga ne-40mil, kwaye ukusetyenziswa kwamandla eetshiphusi zamandla aphezulu ngokubanzi kubhekisa kumandla ombane ngaphezulu kwe-1W. Ngenxa yokuba ukusebenza kwe-quantum ngokuqhelekileyo kungaphantsi kwe-20%, amandla amaninzi ombane aguqulwa abe ngamandla obushushu, ngoko ke ukuchithwa kobushushu kweetshiphusi eziphezulu zamandla kubaluleke kakhulu kwaye kufuna iitshiphusi zibe nendawo enkulu.

Ziziphi iimfuno ezahlukeneyo zenkqubo ye-chip kunye nezixhobo zokusebenza zokuvelisa izinto ze-GaN epitaxial xa kuthelekiswa ne-GaP, i-GaAs, kunye ne-InGaAlP? Ngoba?
Ii-substrates ze-LED eziqhelekileyo ezibomvu kunye ne-yellow chips kunye nokukhanya okuphezulu kwe-quaternary ebomvu kunye ne-yellow chips zenziwe ngezinto ezidibeneyo ze-semiconductor ezifana ne-GaP kunye ne-GaAs, kwaye ngokubanzi zingenziwa zibe yi-N-type substrates. Inkqubo ye-Wet isetyenziselwa i-photolithography, kwaye ii-diamond blades zevili lokusila zisetyenziselwa ukusika kwiitshiphusi. I-chip eluhlaza okwesibhakabhaka eyenziwe ngezinto ze-GaN isebenzisa i-sapphire substrate. Ngenxa yobume be-insulating ye-sapphire substrate, ayinakusetyenziswa njenge-electrode enye ye-LED. Ngoko ke, zombini ii-electrodes ze-P/N kufuneka zenziwe ngaxeshanye kumphezulu we-epitaxial ngokusebenzisa inkqubo yokuchopha okomileyo, kwaye ezinye iinkqubo zokupasa kufuneka zenziwe. Ngenxa yobunzima besafire, kunzima ukuyisika kwiichips kunye nentsimbi yevili lokusila idayimane. Inkqubo yokuvelisa ngokuqhelekileyo iyinkimbinkimbi kwaye iyinkimbinkimbi kunee-LED ezenziwe ngezinto ze-GaP okanye ze-GaAs.

Yintoni isakhiwo kunye neempawu ze-chip "i-electrode ecacileyo"?
I-electrode ebizwa ngokuba yi-transparent electrode kufuneka iqhube kwaye ibonakale. Esi sixhobo ngoku sisetyenziswa ngokubanzi kwiinkqubo zokuvelisa i-crystal yamanzi, kwaye igama layo yi-indium tin oxide, efinyeziweyo njenge-ITO, kodwa ayinakusetyenziswa njenge-solder pad. Xa usenza, qala wenze i-electrode ye-ohmic phezu kwe-chip, emva koko ugubungele umphezulu kunye noluhlu lwe-ITO kunye neplate ye-solder pad kwi-ITO surface. Ngale ndlela, ikhoyo ngoku ehlayo ukusuka kwisikhokelo isasazwe ngokulinganayo kwi-electrode nganye yoqhagamshelwano lwe-ohmic ngokusebenzisa umaleko we-ITO. Kwangaxeshanye, i-ITO, ngenxa yesalathiso se-refractive phakathi kwe-air kunye ne-epitaxial materials, inokunyusa i-angle yokukhutshwa kokukhanya kunye ne-flux ekhanyayo.

Luluphi uphuhliso oluphambili lwetekhnoloji ye-chip yokukhanyisa kwe-semiconductor?
Ngophuhliso lwethekhnoloji ye-LED ye-semiconductor, ukusetyenziswa kwayo kwintsimi yokukhanyisa kwanda, ngakumbi ukuvela kwe-LED emhlophe, eye yaba yinto eshushu ekukhanyeni kwe-semiconductor. Nangona kunjalo, i-chip engundoqo kunye nobuchwepheshe bokupakisha zisafuna ukuphuculwa, kwaye ngokwemiqathango yeechips, kufuneka siphuhlisele kumandla aphezulu, ukukhanya okuphezulu, kunye nokunciphisa ukuxhathisa ukushisa. Ukwandisa amandla kuthetha ukwanda kwangoku esetyenziswa yitshiphu, kwaye indlela ethe ngqo kukwandisa ubungakanani betshiphu. Iitshiphusi eziphezulu ezisetyenziswa ngokuqhelekileyo zijikeleze i-1mm × 1mm, kunye ne-350mA yangoku. Ngenxa yokunyuka kokusetyenziswa kwangoku, ukutshatyalaliswa kobushushu kuye kwaba yingxaki evelele, kwaye ngoku le ngxaki ixazululwe ngokusisiseko ngokusebenzisa indlela yokuguqulwa kwe-chip. Ngokuphuhliswa kobuchwepheshe be-LED, ukusetyenziswa kwayo kwintsimi yokukhanyisa kuya kujongana namathuba angakaze abonwe kunye nemingeni.

Yintoni i-"flip chip"? Siyintoni isakhiwo sayo? Ziziphi iingenelo zayo?
I-LED eluhlaza okwesibhakabhaka ngokuqhelekileyo isebenzisa i-Al2O3 substrate, enobunzima obuphezulu, i-thermal ephantsi kunye ne-conductivity yombane. Ukuba isakhiwo esilungileyo sisetyenzisiweyo, siya kuzisa iingxaki ezichasene ne-static kwelinye icala, kwaye ngakolunye uhlangothi, ukutshatyalaliswa kobushushu kuya kuba ngumcimbi omkhulu phantsi kweemeko eziphezulu zangoku. Okwangoku, ngenxa ye-electrode efanelekileyo ejongene phezulu, inxalenye yokukhanya iya kuvinjelwa, kubangele ukuncipha kokusebenza okukhanyayo. Amandla aphezulu aluhlaza we-LED anokuphumeza ukukhanya okusebenzayo ngakumbi ngetekhnoloji ye-chip inversion kunetekhnoloji yokupakisha yemveli.
Indlela yolwakhiwo oluqhelekileyo ngoku kukuqala ukulungiselela iitshiphusi ze-LED ezinobungakanani obukhulu obuluhlaza kunye ne-eutectic soldering electrode ezifanelekileyo, kwaye kwangaxeshanye ulungise i-silicon substrate enkulu kune-chip ye-LED eluhlaza, emva koko wenze umaleko wegolide kwaye ukhuphe ucingo. umaleko (i-ultrasonic igolide yebhola yebhola edibeneyo ye-solder) ye-eutectic soldering kuyo. Emva koko, i-chip ye-LED enamandla aphezulu ithengiswa kwi-silicon substrate kusetyenziswa izixhobo ze-eutectic soldering.
Uphawu lwesi sakhiwo kukuba i-epitaxial layer iqhagamshelana ngokuthe ngqo ne-silicon substrate, kwaye ukuxhathisa kwe-thermal ye-silicon substrate iphantsi kakhulu kune-sapphire substrate, ngoko ke ingxaki yokutshatyalaliswa kobushushu ixazululwe kakuhle. Ngenxa ye-sapphire substrate eguqulweyo ejonge phezulu, iba yindawo ekhupha ukukhanya, kwaye isafire iyabonakala, ngaloo ndlela isombulula ingxaki yokukhutshwa kokukhanya. Oku ngasentla kulwazi olufanelekileyo lweteknoloji ye-LED. Sikholelwa ukuba ngophuhliso lwesayensi kunye nobuchwepheshe, izibane ze-LED zexesha elizayo ziya kusebenza ngokufanelekileyo kwaye ubomi babo benkonzo buya kuphuculwa kakhulu, oku kusizisela lula ngakumbi.