1. Isishwankathelo semeko yangoku yetekhnoloji ye-silicon esekwe kwii-LEDs

Ukukhula kwezixhobo ze-GaN kwii-silicon substrates zijongene nemingeni emibini emikhulu yobugcisa. Okokuqala, ukungahambi kakuhle kwe-lattice ukuya kwi-17% phakathi kwe-silicon substrate kunye ne-GaN kubangela ukuxinana okuphezulu kwe-dislocation ngaphakathi kwezinto ze-GaN, ezichaphazela ukusebenza kakuhle kwe-luminescence; Okwesibini, kukho ukungahambelani kwe-thermal ukuya kuthi ga kwi-54% phakathi kwe-silicon substrate kunye ne-GaN, eyenza iifilimu ze-GaN zithande ukuqhekeka emva kokukhula kobushushu obuphezulu kunye nokuhla kwiqondo lokushisa, elichaphazela isivuno semveliso. Ke ngoko, ukukhula komgangatho we-buffer phakathi kwe-silicon substrate kunye nefilimu ebhityileyo ye-GaN kubaluleke kakhulu. Umaleko we-buffer udlala indima ekunciphiseni ingxinano ye-dislocation ngaphakathi kwe-GaN kunye nokunciphisa ukuqhekeka kwe-GaN. Ubukhulu becala, inqanaba lobuchwephesha bomaleko we-buffer limisela ukusebenza kakuhle komyinge wangaphakathi kunye nemveliso yemveliso ye-LED, ekugxilwe kuyo kunye nobunzima be-silicon-based.I-LED. Ukuza kuthi ga ngoku, notyalo-mali olubalulekileyo kuphando nakuphuhliso oluvela kushishino nakwimfundo ephakamileyo, lo mceli mngeni wobuchwepheshe woyisiwe.

I-silicon substrate ifunxa ngamandla ukukhanya okubonakalayo, ngoko ke ifilimu ye-GaN kufuneka idluliselwe kwenye i-substrate. Ngaphambi kokudluliselwa, i-reflectory reflectivity ephezulu ifakwe phakathi kwefilimu ye-GaN kunye nenye i-substrate ukukhusela ukukhanya okukhutshwa yi-GaN ukuba kufakwe kwi-substrate. Isakhiwo se-LED emva kokudluliselwa kwe-substrate kwaziwa kwishishini njenge-Thin Film chip. Iichips zefilim ezibhityileyo zineengenelo ngaphezulu kweetshiphusi zesakhiwo esisesikweni ngokwemigaqo yosasazo lwangoku, ukuhanjiswa kwe-thermal, kunye nokufana kwendawo.

2. Isishwankathelo semeko yesicelo ngokubanzi kunye nombono wemarike we-silicon substrate LEDs

Ii-LED ezisekelwe kwi-silicon zinesakhiwo esithe nkqo, ukusabalalisa okufanayo kwangoku, kunye nokusabalalisa ngokukhawuleza, okwenza ukuba zilungele izicelo zamandla aphezulu. Ngenxa yokukhanya kwayo kwicala elinye, isikhokelo esilungileyo, kunye nomgangatho olungileyo wokukhanya, ilungele ngakumbi izibane eziphathwayo ezifana nezibane zemoto, izibane zokukhangela, izibane zemigodi, izibane zefowuni eziphathwayo, kunye neendawo zokukhanya eziphezulu ezineemfuno zokukhanya okuphezulu. .

Itekhnoloji kunye nenkqubo yeJingneng Optoelectronics silicon substrate LED sele ikhulile. Ngesiseko sokuqhubeka nokugcina inzuzo ekhokelayo kwintsimi ye-silicon substrate eluhlaza okwesibhakabhaka i-chips ye-LED, iimveliso zethu ziyaqhubeka nokwandisa kwiindawo zokukhanyisa ezifuna ukukhanya okuhambelanayo kunye nomgangatho ophezulu wokuphuma, okufana ne-white light chips kunye nokusebenza okuphezulu kunye nexabiso elongezelelweyo. , izibane ze-LED zefowuni eziphathwayo, izibane zemoto ze-LED, izibane ze-LED zesitrato, ukukhanya kwe-LED, njl.

3. Ukuqikelelwa kwendlela yophuhliso ye-silicon substrate LED

Ukuphucula ukukhanya kokukhanya, ukunciphisa iindleko okanye ukuphumelela kweendleko ngumxholo ongunaphakade kwiIshishini le-LED. I-silicon substrate iitshiphusi zefilimu ezibhityileyo kufuneka zipakishwe ngaphambi kokuba zifakwe, kunye neendleko zokupakisha iiakhawunti zenxalenye enkulu yeendleko zesicelo se-LED. Tsiba ukupakishwa kwemveli kwaye upakishe ngokuthe ngqo amacandelo kwi-wafer. Ngamanye amazwi, ukupakishwa kwesikali se-chip (CSP) kwi-wafer kunokutsiba isiphelo sokupakisha kwaye singene ngokuthe ngqo kwisiphelo sesicelo ukusuka kwisiphelo se-chip, ngakumbi ukunciphisa iindleko zesicelo se-LED. I-CSP lelinye lamathemba eGaN esekwe kwi-LEDs kwisilicon. Iinkampani zamazwe ngamazwe ezifana ne-Toshiba kunye ne-Samsung baye baxela ukusebenzisa i-silicon esekelwe kwii-LED ze-CSP, kwaye kukholelwa ukuba iimveliso ezinxulumene nazo ziya kufumaneka ngokukhawuleza kwimarike.

Kwiminyaka yakutshanje, enye indawo eshushu kwishishini le-LED yiMicro LED, ekwabizwa ngokuba yi-micrometer level LED. Ubungakanani beMicro LEDs busuka kwiimicrometer ezimbalwa ukuya kumashumi eemicrometers, phantse kwinqanaba elifanayo nobukhulu befilimu ezibhityileyo zeGaN ezikhuliswe yi-epitaxy. Kwisikali se-micrometer, izinto ze-GaN zinokwenziwa ngokuthe ngqo kwi-GaNLED eyakhiwe ngokuthe nkqo ngaphandle kwesidingo senkxaso. Oko kukuthi, kwinkqubo yokulungiselela i-Micro LEDs, i-substrate yokukhula kwe-GaN kufuneka isuswe. Inzuzo yendalo ye-silicon esekelwe kwi-LED kukuba i-silicon substrate inokususwa nge-chemical etching etching yodwa, ngaphandle kwempembelelo kwizinto ze-GaN ngexesha lenkqubo yokususa, ukuqinisekisa isivuno kunye nokuthembeka. Ngokwale mbono, itekhnoloji ye-silicon substrate ye-LED inyanzelekile ukuba ibe nendawo kwibala le-Micro LEDs.